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IPG20N06S4L-26 INFINEON/英飛凌 PG-TDSON-8
| 產(chǎn)品種類: | MOSFET | |
| 技術(shù): | Si | |
| 安裝風(fēng)格: | SMD/SMT | |
| 封裝 / 箱體: | TDSON-8 | |
| 晶體管極性: | N-Channel | |
| 通道數(shù)量: | 2 Channel | |
| Vds-漏源極擊穿電壓: | 60 V | |
| Id-連續(xù)漏極電流: | 20 A | |
| Rds On-漏源導(dǎo)通電阻: | 21 mOhms, 21 mOhms | |
| Vgs - 柵極-源極電壓: | - 16 V, + 16 V | |
| Vgs th-柵源極閾值電壓: | 1.2 V | |
| Qg-柵極電荷: | 20 nC | |
| 最小工作溫度: | - 55 C | |
| 最大工作溫度: | + 175 C | |
| Pd-功率耗散: | 33 W | |
| 通道模式: | Enhancement | |
| 資格: | AEC-Q101 | |
| 商標(biāo)名: | OptiMOS | |
| 封裝: | Reel | |
| 封裝: | Cut Tape | |
| 封裝: | MouseReel | |
| 商標(biāo): | Infineon Technologies | |
| 配置: | Dual | |
| 下降時(shí)間: | 10 ns, 10 ns | |
| 高度: | 1.27 mm | |
| 長(zhǎng)度: | 5.9 mm | |
| 產(chǎn)品類型: | MOSFET | |
| 上升時(shí)間: | 1.5 ns, 1.5 ns | |
| 系列: | OptiMOS-T2 | |
| 工廠包裝數(shù)量: | 5000 | |
| 子類別: | MOSFETs | |
| 晶體管類型: | 2 N-Channel | |
| 典型關(guān)閉延遲時(shí)間: | 18 ns, 18 ns | |
| 典型接通延遲時(shí)間: | 5 ns, 5 ns | |
| 寬度: | 5.15 mm | |
| 零件號(hào)別名: | IPG2N6S4L26XT SP000705588 IPG20N06S4L26ATMA1 | |
| 單位重量: | 96.440 mg |
