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IRFB4410ZPBF INFINEON/英飛凌 TO-220-3
| 產(chǎn)品種類: | MOSFET | |
| RoHS: | 詳細信息 | |
| 技術(shù): | Si | |
| 安裝風格: | Through Hole | |
| 封裝 / 箱體: | TO-220-3 | |
| 晶體管極性: | N-Channel | |
| 通道數(shù)量: | 1 Channel | |
| Vds-漏源極擊穿電壓: | 100 V | |
| Id-連續(xù)漏極電流: | 97 A | |
| Rds On-漏源導通電阻: | 7.2 mOhms | |
| Vgs - 柵極-源極電壓: | - 20 V, + 20 V | |
| Vgs th-柵源極閾值電壓: | 1.8 V | |
| Qg-柵極電荷: | 83 nC | |
| 最小工作溫度: | - 55 C | |
| 最大工作溫度: | + 175 C | |
| Pd-功率耗散: | 230 W | |
| 通道模式: | Enhancement | |
| 封裝: | Tube | |
| 商標: | Infineon / IR | |
| 配置: | Single | |
| 高度: | 15.65 mm | |
| 長度: | 10 mm | |
| 產(chǎn)品類型: | MOSFET | |
| 工廠包裝數(shù)量: | 1000 | |
| 子類別: | MOSFETs | |
| 晶體管類型: | 1 N-Channel | |
| 寬度: | 4.4 mm | |
| 零件號別名: | IRFB4410ZPBF SP001564008 | |
| 單位重量: | 2 g |
